DocumentCode :
513946
Title :
Influence of Top Oxide Thickness on Electrical Properties of ONO Stacked Insulators
Author :
Reisinger, H. ; Spitzer, A.
Author_Institution :
Siemens AG, Otto Hahn Ring 6, D-8000 Mÿnchen 83, Federal Republic of Germany
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
545
Lastpage :
548
Keywords :
Capacitors; Current density; Current measurement; Density measurement; Dielectrics and electrical insulation; Electron traps; Oxidation; Random access memory; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436546
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=513946
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