DocumentCode
513951
Title
Scanning Photoluminescence Assessment MOCVD InGaAs/InP Lattice Mismatched Heterostructures During the Fabrication of Photodiode Arrays
Author
Schohe, K. ; Longére, J.Y. ; Krawczyk, S. ; Vilotitch, B. ; Lenoble, C. ; Villard, M. ; Hugon, X.
Author_Institution
Laboratoire d´´Electronique, UA CNRS 848, Ecole Centrale de Lyon, 36, avenue Guy de collongue, 69131 Ecully Cedex, France
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
503
Lastpage
507
Abstract
We report on scanning photoluminescence (SPL) measurements carried out on MOCVD lattice mismatched InGaAs/InP heterostructures during the fabrication of planar PIN photodiode arrays. Electrical characterization was performed on completed devices. We show that SPL measurements reveal a large number of defects and non-uniformities in the deposited films. The correlation of SPL measurements and the reverse current of individual diodes, is presented
Keywords
Current measurement; Electric variables measurement; Fabrication; Indium gallium arsenide; Indium phosphide; Lattices; MOCVD; Photodiodes; Photoluminescence; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436559
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