Title :
Technology and Characterization of a Photoconductive Device on InP
Author :
Wehmann, H.-H. ; Schlachetzki, A.
Author_Institution :
Institut fÿr Halbleitertechnik, Technische Universitÿt Postfach 3329, D-3300 Braunschweig, Federal Republic of Germany
Abstract :
We have fabricated highly sensitive, planar, I-bar-shaped photo-conductive devices in unintentionally doped LPE-grown InGaAs layers on semi-insulating InP substrates. The gain is measured in dependence on the optical power and the temperature, showing a maximum above 106 at low temperature and intensity. This behavior can be described by a model based on the Shockley-Hall-Read formalism. Further results on the wavelength-dependent gain and the speed of the devices demonstrate their suitability for operation in optical communication systems.
Keywords :
Gain measurement; Indium gallium arsenide; Indium phosphide; Optical sensors; Photoconducting devices; Power measurement; Power system modeling; Temperature dependence; Temperature sensors; Wavelength measurement;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
