DocumentCode
513952
Title
Technology and Characterization of a Photoconductive Device on InP
Author
Wehmann, H.-H. ; Schlachetzki, A.
Author_Institution
Institut fÿr Halbleitertechnik, Technische Universitÿt Postfach 3329, D-3300 Braunschweig, Federal Republic of Germany
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
491
Lastpage
494
Abstract
We have fabricated highly sensitive, planar, I-bar-shaped photo-conductive devices in unintentionally doped LPE-grown InGaAs layers on semi-insulating InP substrates. The gain is measured in dependence on the optical power and the temperature, showing a maximum above 106 at low temperature and intensity. This behavior can be described by a model based on the Shockley-Hall-Read formalism. Further results on the wavelength-dependent gain and the speed of the devices demonstrate their suitability for operation in optical communication systems.
Keywords
Gain measurement; Indium gallium arsenide; Indium phosphide; Optical sensors; Photoconducting devices; Power measurement; Power system modeling; Temperature dependence; Temperature sensors; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436560
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