• DocumentCode
    513953
  • Title

    MOMBE Growth of GaInAs/InP Structures: Quantum Wells anid Selective Epitaxy

  • Author

    Gailhanou, M. ; Goldstein, L. ; Lambert, Mathieu ; Boulou, M. ; Starck, C. ; Le Gouezigou, L.

  • Author_Institution
    Laboratoires de Marcoussis, CR-CGE, Route de Nozay 91460 Marcoussis (France)
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    495
  • Lastpage
    498
  • Abstract
    High quality InP and GaInAs have been grown by MOMBE. 77K mobilities of 57000cm2/Vs for InP and 50000cm2/Vs for GaInAs were obtained. We have prepared GaInAs/InP multi single quantum well structure showing sharp photoluminescence peaks with linewidths as low as 7 meV for 1.7nm well. We have also studied selective epitaxy on different shapes of mesas and performed the planarization of a RIE etched ridge.
  • Keywords
    Dielectric devices; Dielectric substrates; Dry etching; Epitaxial growth; Hydrogen; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Shape measurement; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513953