DocumentCode :
513961
Title :
1.2 μm BICMOS Technology for Mixed Analog-digital Applications
Author :
Mallardeau, C. ; Keen, P. ; Monroy, A. ; Marin, J.C. ; Celi, D. ; Brunel, P.A. ; Roche, M.
Author_Institution :
SGS-THOMSON MICROELECTRONICS, B.P. 217,38019 GRENOBLE Ced. FRANCE
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
461
Lastpage :
464
Abstract :
A 1.2μm mixed analog-digital BICMOS technology has been developed and characterized. The objective of this technology is to achieve simultaneously high density CMOS logic (5V) and high performance bipolar transistors for analog applications (12V). In this paper we particulary discuss the results of the optimization of the bipolar device parameters, in order to combine high voltage analog requirements and high frequency performance.
Keywords :
Analog-digital conversion; BiCMOS integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Contact resistance; Cutoff frequency; Marine technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436571
Link To Document :
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