• DocumentCode
    513982
  • Title

    Electrical Properties of Ultra Thin Multilayer Dielectrics on Polysilicon

  • Author

    Hirschler, J. ; Thanh, L.Do ; Küsters, K.H. ; Sichart, K.v.

  • Author_Institution
    Siemens AG, Dept. HL T 111, 8000 Mÿnchen 83, Otto-Hahn-Ring 6, West Germanny
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    357
  • Lastpage
    360
  • Abstract
    We demonstrate the feasibility of very thin ONO (SiO2/Si3N4/SiO2) dielectrics on poly-Si for 16M DRAM application. For Dox eff. = 8.5nm, the leakage current density is lower than 10-8A/cm2, and the long term stability is more than 10 years at electric fields of 5.5MV/cm. The onset of tunneling current in ONO dielectrics depends on the thickness of the SiO2 entry potential barrier. The high field current characteristic depends on the thickness of the SiO2 exit potential barrier.
  • Keywords
    Current density; Current measurement; Density measurement; Dielectric measurements; Nonhomogeneous media; Random access memory; Semiconductor films; Stress measurement; Thickness measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513982