Title :
Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors
Author :
Schaber, H. ; Bieger, J. ; Benna, B. ; Meister, T.
Author_Institution :
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Munchen 83, FRG
Keywords :
Annealing; Bipolar transistors; Boron; Crystallization; Current measurement; MONOS devices; Optical films; Pollution measurement; Silicon; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
