• DocumentCode
    513993
  • Title

    Trench Isolation Schemes for Bipolar Devices --- Benefits and Limiting Aspects

  • Author

    Goto, Hiroshi ; Inayoshi, Katsuyuki

  • Author_Institution
    Bipolar Process Division, Fujitsu Limited, 1015, Kamikodanaka, Nakahara, Kawasaki, 211, Japan
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    369
  • Lastpage
    372
  • Abstract
    This paper gives a review of benefits and limiting aspects in trench isolation techniques for bipolar deviices. The most sophisticated trench isolation techniques have realized not only higher packing densities but reduced collector-substrate, wiring-substrate and base-collector parasitic capacitances. By using these techniques, high performance bipolar devices have been fabricated while crystal defects caused by trench structures are the serious problem. Trench isolaltion techniques are still in progress, and it seems now that there is no apparent limiting aspect until the trench width reaches the filler material width to sustain enough breakdown voltage.
  • Keywords
    Acoustic scattering; Boltzmann equation; Distribution functions; Electrons; Hydrodynamics; Lattices; Light scattering; Optical scattering; Particle scattering; Semiconductor device reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436610