• DocumentCode
    513995
  • Title

    0.25 μm All Level e-Beam Pseudomorplhic AlGaAs/InGaAs MODFET with ft over 65 GHz

  • Author

    Lopez, L. ; Marten, A. ; Forchel, A. ; Caceres, J.L. ; Nickel, H. ; Schlapp, W. ; Losch, R. ; Briggmann, Dieter

  • Author_Institution
    IV. Phys. Inst, Univ. Stuttgart, FRG.; E.T.S.I.T., Univ. polyt. Madrid, Spain
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    279
  • Lastpage
    282
  • Abstract
    This contribution describes the fabrication of 0.25 μm gatelength MODFETs onl pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8 As material. An e-beam writer was employed in all lithographic levels. We have obtained a DC extrinsic transcoductance gm≫4400≫ mS/mm. From mirowave measurement and the nodeled equivalent circuit ft ft and Fmax values of over 65 GHz and 110 GHz are obtained.
  • Keywords
    Density measurement; Electron mobility; Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; Length measurement; MODFETs; Nominations and elections; Strain measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513995