• DocumentCode
    514002
  • Title

    An Investigation into the Parasitic Effects Affecting the Operation of HEMT-based ICs

  • Author

    Dumas, J.M. ; Mottet, S. ; Belhadj, A. ; Christou, A. ; Audren, P. ; Kiriakidis, G.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, BP 40, 22300 Lannion, France
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    259
  • Lastpage
    262
  • Abstract
    A study of the parasitic effects pentalizing the operation of two-dimensional electron gas field effect transistors (HEMTs) has been carried-out. In this paper, we present the results - experimental characterizations together with modellinig - obtained for two major process-dependent parasitics: kink effect and beckgatinig effect.
  • Keywords
    Buffer layers; Doping; Electrons; FETs; Gallium arsenide; Numerical models; Paper technology; Semiconductor process modeling; Threshold voltage; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514002