The Outdiffusion of Boron and Arsenic from Preformed Cobalt Disilicide Layers

Arsenic out-diffusing from Cobalt Disilicide into underlying silicon displays an enhanced activation level of up to 80%, and an enhanced diffusivity of greater than one order of magnitude. Boron, in contrast, displays a diffusivity as small as 0.25 times that expected. These observations are consistent with a considerable Si-vacancy injection and Si-interstitial depletion caused by the silicide layer in the silicon substrate.