A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI

This paper describes a new process technology, which is called SCOT: salicide (self-aligned silicide) base contact technology, and applied for realizing high performance prescaler IC and high gate density masterslice LSI. The main feature of this process, for reduction of the base resistance and capacitance, is a silicidation of the base contact which is opened by employing self-alignment technology. A 1/128, 1/129 two-modulus prescaler IC constructed of the 1.5 ¿m SCOT transistors has been improved to a high operation of 2.1 GHz at 56-mW power dissipation. An ECL 18K-gate masterslice has been developed by a variable size cell (VSC) approach, employing the SCOT process.