Shallow Junctions Fabrication by Using Molibdenum Silicide and Rapid Thermal Annealing

Good quality p+/n and n+/p shallow junctions (~0.15 ¿m) suitable for VLSI technology have been fabricated by using Mo silicide and Rapid Thermnal Annealing (RTA). The processes of implantation through Mo films and into MoSi2 layers have been comparatively analysed on the basis of SIMS and carrier concentration profiles, contact resistivity measurements and electrical characterization of the junctions. Better electrical results are exhibited by the second technology which allows one to fabricate devices with low contact resistivities and low leakage currents.