Hot Electron Dynamics Monte Carlo Simulation in Heterostructure Semiconductor Devices

This paper reports on a Monte Carlo simulation of the hot electron transport phenomenon in an heterostructure semiconductor device. Two different electron populations have been simulated: the hot electrons injected via a tunneling mechanism into the base, and the thermal electrons arising from the high doping density of the ballistic device. Electron-electron scattering and plasmon-electron scattering have been introduced into the physical model which includes also electron degeneration and quantum reflections at the collector barrier. The simulation has been compared with the experimental results obtained from the THETA device at 4.2K.