Efficient Integration of Device and Circuit Simulation

Integration of process, device and circuit simulation tools is desirable in modern process development and circuit design, as it allows rapid assessment of the impact of a new process or process change on circuit performance, [1]. This paper presents an efficient scheme for the extraction of MOSFET linear region SPICE level 3 parameters from numerical device simulations. Carrier concentrations, potential and mobility are used to derive a total of seven linear region parameters from three off-state bias points. This is in contrast to standard curve fitting techniques where twenty or, more on-state bias points would typically be used to obtain the required parameters.