• DocumentCode
    514018
  • Title

    Simulatlon of Ion Implantation into Multitlayer Structures

  • Author

    Wierzbicki, R.J. ; Lorenz, J. ; Barthel, A.

  • Author_Institution
    Fraunhofer Arbeitsgruppe fÿr Integrierte Schaltungen, Artilleriestrasse 12, 8520 Erlangen, West-Germany
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    193
  • Lastpage
    197
  • Abstract
    For the analytical description of doping profiles after ion implantation, good multilayer models are required to describe the implantation through thin layers, e.g. a scattering oxide or non-vertical mask edges. In this paper, benefits and drawbacks of some published models are discussed, and an improvement is suggested. Comparisons with results from Monte Carlo simulations and SIMS measurements are shown.
  • Keywords
    Amorphous materials; Crystallization; Doping profiles; Ion implantation; Monte Carlo methods; Neodymium; Nonhomogeneous media; Numerical models; Scattering; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514018