Title :
An InGaAs/GaAs Strained Superlattice MSM Photodiode for Fast Light Detection at 1.3 μm
Author :
Zirngibl, M. ; Bischoff, J.C. ; Sachot, R. ; Ilegems, M. ; Beaud, P. ; Hodel, W.
Author_Institution :
Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Abstract :
A metal-semiconductor-metal (MSM) detector on GaAs sensitive up to 1.4 μm is presented. The active layer consists of a MBE grown InGaAs/GaAs superlattice. The large size detector (2500 μm2) is defined by a simple one-level lift-off process. Despite the lattice mismatch, the detector shows a response time below 30 ps full width at half maximum at 1.3 μm and a relatively low dark current of 1 μA at 10 V bias.
Keywords :
Appropriate technology; Dark current; Fast light; Gallium arsenide; Indium gallium arsenide; Lattices; Metallic superlattices; Optical noise; Photodiodes; Physics;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
