Title :
Characterization of Hot Carrier Trapping in the Gate Oxide of MOSFETs
Author :
Mahnkopf, R. ; Przyrembel, G. ; Seifert, W ; Wagemann, H.G.
Author_Institution :
Institut fÿr Werkstoffe der Elektrotechnik, der Technischen Universitÿt Berlin, JebensstraÃ\x9fe 1, D-1000 Berlin 12, West-Germany
Abstract :
The degradation of MOSFET´s due to hot carrier stress is described quantitatively by trapping of die injected carriers a density of traps NT with a capture cross section ¿. The temperature- and field-dependence of ¿ strongly affects the stress behavior for electron and hole injection. The time dependence of the generation of fixed oxide charge and interface states suggests different mechanisms for both processes.
Keywords :
Character generation; Charge carrier processes; Degradation; Electron traps; Hot carriers; Interface states; MOSFETs; Stress; Temperature dependence; Temperature distribution;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
