Title :
Impact of S/D-Preamorphization on CMOS Performance
Author :
Mazuré, C. ; Winnerl, J. ; Neppl, F.
Author_Institution :
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, FRG
Abstract :
Substrate amorphization prior to Source/Drain implantation is used for shallow junction fabrication. The impact of preamorphization on CMOS Performance is investigated. Results for a 1.5¿m double well CMOS Technology with phosphorus and boron drains are presented. The influence of preamorphization on the transistor characteristics, speed and latch-up hardness is discussed.
Keywords :
Annealing; Boron; CMOS technology; Fabrication; ISO; Implants; Microelectronics; P-n junctions; Research and development; Surface resistance;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
