The Influence of Trench Isolation on Sub-Micron Transistors

Author

Roberts, M C ; Foster, D J ; Bolbot, P H ; Medhurst, P L

Author_Institution

Plessey Research Caswell Limited, The Allen Clark Research Centre, Caswell, Towcester, Northants. U.K. NN12 8EQ

fYear

1987

fDate

14-17 Sept. 1987

Firstpage

589

Lastpage

592

Keywords

CMOS process; Circuits; Conductors; Electric variables; Geometry; Leakage current; MOS devices; MOSFETs; Power dissipation; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1987. ESSDERC '87. 17th European

Conference_Location

Bologna, Italy

Print_ISBN

0444704779

Type

Filename

5436710

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