Title :
Statistical Measurements of PMOS Subthreshold Current for 1.3 to 0.5 Micron Channel Lengths
Author :
D´Ouville, T. Ternisien ; Basset, R. ; Amm, D.T. ; Ravezzani, S. ; Delpech, P. ; Moi, D. ; Paoli, M. ; Minghetti, B. ; Mingam, H.
Author_Institution :
Centre Natitonal d´´Etudes des Télécommunications, Chemin du Vieux Chêne, BP 98, F - 38243 Meylan.
Abstract :
The threshold voltage and subthreshold current of micron and submicron PMOS devices have been investigated for both a classical n - well and a retrograde n - well process. The two processes show similar threshold voltage characteristics down to 0.5 micron but the subthreshold current is much improved for the retrograde process.
Keywords :
Annealing; Boron; Current measurement; Degradation; Implants; Length measurement; MOS devices; Subthreshold current; Temperature; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
