• DocumentCode
    514073
  • Title

    Statistical Measurements of PMOS Subthreshold Current for 1.3 to 0.5 Micron Channel Lengths

  • Author

    D´Ouville, T. Ternisien ; Basset, R. ; Amm, D.T. ; Ravezzani, S. ; Delpech, P. ; Moi, D. ; Paoli, M. ; Minghetti, B. ; Mingam, H.

  • Author_Institution
    Centre Natitonal d´´Etudes des Télécommunications, Chemin du Vieux Chêne, BP 98, F - 38243 Meylan.
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    679
  • Lastpage
    682
  • Abstract
    The threshold voltage and subthreshold current of micron and submicron PMOS devices have been investigated for both a classical n - well and a retrograde n - well process. The two processes show similar threshold voltage characteristics down to 0.5 micron but the subthreshold current is much improved for the retrograde process.
  • Keywords
    Annealing; Boron; Current measurement; Degradation; Implants; Length measurement; MOS devices; Subthreshold current; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436716
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514073