DocumentCode
514092
Title
A high performance P-channel EPROM cell
Author
Cantarelli, D. ; Maurelli, A. ; Baldi, L.
Author_Institution
SGS Microelettronica S. p. A., via C. Olivetti 2 -20041 Agrate Brianza (MI)-Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
769
Lastpage
771
Abstract
Recent results show higher gate current in P-channel devices than in IV-channel ones under the same bias conditions. By this reason, we produced a P-chiannel EPROM cell, making use of a standard N-channel cell layout. We present a complete electrical charactcrization and point out some advantages which make P-channel EPROM cells very promising, especially for future CMOS applications.
Keywords
Annealing; EPROM; Epitaxial growth; Geometry; Semiconductor films; Silicon; Substrates; Telecommunications; Temperature; Thickness control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436740
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