Temperature Increase by Self-Heating in VLSI CMOS

Expermental and theoretical investigations were carried out to study the steady-state and transient self-heating effects in VLSI MOST´s. The drain and substrate currents and the thermoelectric power in the substrate were used to monitor the internal temperature of the MOST. The results show that the devices operate in nonisothermal conditions due to the temperature rise in the device caused by self-heatnig in the steady-state and the transient regimes.