Simulations of aging effects in MOS transistors

Author

Bergonzoni, C. ; Doyle, B.

Author_Institution

SGS Microelettronica, via C.Olivetti 2, 20041 Agrate Brianza (MT)-Italy

fYear

1987

fDate

14-17 Sept. 1987

Firstpage

721

Lastpage

724

Keywords

Aging; Analytical models; Degradation; Lead compounds; MOSFETs; Region 1; Region 2; Solid modeling; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1987. ESSDERC '87. 17th European

Conference_Location

Bologna, Italy

Print_ISBN

0444704779

Type

Filename

5436748

Link To Document