• DocumentCode
    514109
  • Title

    A New SCR Parameter Extraction Method to Help Design for Reliability in CMOS Circuits

  • Author

    Erdelyi, K. ; Knapp, G.

  • Author_Institution
    Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325 Budapest, P. O. Box 76. Hungary
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    787
  • Lastpage
    790
  • Keywords
    Bipolar transistors; Circuit simulation; Design methodology; Equations; Integrated circuit reliability; Noise measurement; Parameter extraction; Physics; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514109