Low Threshold BH Lasers Emitting at 1.5 μm Made from Gas Source MBE Heterostructures

Buried heterostructures (BH) lasers are made from low threshold current density (1.7 kA/cm² at 1.5μm) GaInAsP/InP double heterostucture (DH) grown by Gas Source Molecular Beam Epitaxy (GSMBE) and using a standard LPE regrowth fabrication process. Low threshold current (25 mA), high quantum differential efficiency (43%) BH lasers emitting at 1.5μm have been obtained. Due to the very good homogeneity in thickness and composition of the epitaxial layers over a 2" diameter GSMBE wafer, the dispersion of the useful laser parameters is very low (± 6 mA for threshold current, ± 5 % for differential efficiency, ± 3 nm for wavelength). These lasers exhibit a stable behaviour on preliminary aging test.