DocumentCode
514126
Title
Carrier Multiplication and Avalanche Breakdown in Self-Aligned Bipolar Transistors
Author
Reisch, M.
Author_Institution
SIEMENS AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Muenchen 83, FRG
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
901
Lastpage
904
Keywords
Avalanche breakdown; Bipolar transistors; Breakdown voltage; Diodes; Doping; Electron emission; Extraterrestrial measurements; Impact ionization; Measurement errors; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436780
Link To Document