Title :
Measurement and Calculation of Base-Resistance Components of Modern High-Speed Bipolar Transistors
Author :
Fertsch, J. ; Voit, H. ; Klose, H. ; Böhm, W.R.
Author_Institution :
Siemens AG, Central Research and Development, Otto-Hahn-Ring 6. D 8000 Mÿnchen 83, FRG
Abstract :
A numerical method based on the Gummel-Poon model is presented, which permits to calculate the components of the base resistance from the layout and easily accessible DC-parameters. The calculated results are compared with results derived from measured S-parameters.
Keywords :
Bipolar transistors; Contact resistance; Current measurement; Design optimization; Electrical resistance measurement; Equations; Frequency measurement; Impedance; Region 3; Scattering parameters;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
