Title :
A New Silmple Analytical Evaluation of Minority Carriler Current in Arbitrarily Doped Region with Non-thermal Generation of Carriers
Author :
Selvakumar, C.R. ; Roulston, D.J.
Author_Institution :
Deptartment of Electrical Engineering, University of Waterloo, Waterloo, Canada N2L 301
Abstract :
A simple general analytical solution to the minority carrier transport equations in an arbitrarily doped semiconductor (Si, GaAs, and InGaAsP) region is obtained by including an arbitrary non-thermal source term in the continuity equation. Internal quantum efficiencies resulting from AM1 illumination in gaussian doped silicon emitters are calculated by the new analytical expression arnd compared with ``exact´´ computer calculations.
Keywords :
Charge carrier density; Equations; Gallium arsenide; Lighting; Neodymium; Photonic band gap; Photovoltaic cells; Semiconductor device doping; Silicon; Solar power generation;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
