• DocumentCode
    514137
  • Title

    Rapid Thermal Processing of Polysilicon Emitter Bipolar Transistors in a Combined CMOS/Bipolar Process

  • Author

    Grant, Lindsay A. ; McNeill, D.W. ; Blomley, P.F.

  • Author_Institution
    STC Technology, London Road, Harlow, CM17 9NA, UK
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    37
  • Lastpage
    39
  • Abstract
    The effect of RTA time on the emitter profiles and base current of polysilicon emitter bipolar transistors has been studied. Experimental results show increasing base current with anneal time. The contact saturation current density Jos has been extracted for a device with polysilicon doping level of 3×1020 cm¿3 and a 45 second 1100°C RTA.
  • Keywords
    Bipolar transistors; CMOS process; Furnaces; Grain boundaries; Oxidation; Predictive models; Rapid thermal annealing; Rapid thermal processing; Semiconductor device modeling; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514137