DocumentCode
514141
Title
Non-Alloyed Ge/Pd Ohmic Contact for GaAs MESFET´s
Author
Paccagnella, A. ; Canali, C. ; Donzelli, G. ; Zanoni, E. ; Zanetti, R. ; Lau, S.S.
Author_Institution
Dipartimento di Ingegneria. Universita di Trento, 1-38050 Mesiano di Povo (TN), Italy
fYear
1988
fDate
13-16 Sept. 1988
Abstract
GaAs MESFET´s with non-alloyed ohmic contacts have been achieved through a solid phase reaction of the Ge/Pd/GaAs(xtl) structure upon annealing at 325° C for 30 min. Different Au-based overlayers over Ge/Pd have been tested for device applications and compared with a conventional AuGeNi contact. The thermal stability of the contact resistivity has been evaluated through long-term storages at 300°C.
Keywords
Annealing; Conductivity; Epitaxial growth; Gallium arsenide; MESFETs; Ohmic contacts; Solid state circuits; Surface morphology; Thermal resistance; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436953
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