Title :
Rapid Thermal Annealing of TiW Schottky Contacts on GaAs
Author :
Van Hove, M. ; de Potter, M. ; De Raedt, W. ; Zou, G. ; Van Rossum, M.
Author_Institution :
IMEC vzw, Kapeldreef 75, B-3030 Leuven, Belgium
Abstract :
The stability of the TiW/GaAs interface during rapid thermal annealing at temperatures between 700°C and 1050°C has been investigated using SIMS, Auger, RBS, XRD, cross-sectional TEM, EDS, IV and CV analysis. Schottky contact measurements showed a steady increase of the barrier height with annealing temperature from the as-deposited value of 0.70eV to 0.95eV after annealing at 950°C. The results are consistent with an artificial barrier height enhancement due to p-doping of the substrate by indiffusing Ti.
Keywords :
Argon; Chemicals; Contacts; Gallium arsenide; Rapid thermal annealing; Schottky barriers; Substrates; Temperature; Thermal stability; X-ray scattering;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
