DocumentCode
514143
Title
Control of the Fabrication Steps of InP MIS Transistors by Means of Scanning Photoluminescence Measurements
Author
Commere, B. ; Garrigues, M. ; Krawczyk, S.K. ; Lallemand, C. ; Schohe, K. ; Canut, B.
Author_Institution
Laboratoire d´´Electronique, CNRS-UA 848, Ecole Centrale de Lyon, 36, Av. Guy de Collongue, F-69131 Ecully Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
We show the efficiency of scanning photoluminescence measurements for monitoring the quality, homogeneity and reproducibility of the starting wafers and processed substrates after each technological step during the realization of InP MIS transistors. Owing to this new technique, which is noninvasive, contactless and fast, we have obtained a considerable improvement of the fabricated devices.
Keywords
Annealing; Etching; Fabrication; Indium phosphide; Performance evaluation; Photoluminescence; Reproducibility of results; Resumes; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436955
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