DocumentCode :
514144
Title :
Mg*/O* Ion Implantation in GaAs/GaAlAs Heterostructures
Author :
Descouts, B. ; Duhamel, N. ; Gao, Y.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196, Av. Henri Ravera, F-92220 Bagneux. France
fYear :
1988
fDate :
13-16 Sept. 1988
Abstract :
Mg+ and O+ ion implantations have been performed in GaAs/GaAlAs heterostructures for bipolar transistor applications in order to form an isolation layer in the collector region (with 0) and to contact the base layer (with Mg). Rapid thermal annealing with peak temperature up to 900°C has been employed to activate Mg. We show that the conditions to obtain compensation by oxygen are strongly dependant on the starting material. Moreover for low oxygen doses we have noted an evolution of the compensation with time. Finally we discuss the interaction between Mg and Be (dopant of the base).
Keywords :
Bipolar transistors; Capacitance measurement; Gallium arsenide; Impurities; Ion implantation; Peak to average power ratio; Performance evaluation; Rapid thermal annealing; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5436956
Link To Document :
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