Simulation of Source/Drain Structures for Submicron MOSFETs with and without Preamorphization

A selfconsistent model for the impurity and point defect diffusion is proposed and applied successfully to high concentration phosphorus and boron diffusion with and without preamorphized substrate. In particular the generation of the interstitials by high phosphorus and boron diffusion, the absorption of the interstitials at the damaged layer consisting of dislocation loops - a remnant of the preamorphization -, and the generation of the interstitials by the decay of the precipitated phase of the impurities above the solubility limit is taken into account in a consistent way. The present model is an important tool for advanced optimization for submicron MOSFETs dealing with involved interstitial dynamics as in the presence of preamorphization effects.