DocumentCode
514159
Title
Power MOS FET Models for ``Switching´´ Circuits
Author
Rossel, P. ; Maimouni, R. ; Belabadia, M. ; Tranduc, H. ; Cordonnier, C.E. ; Bairanzade, M.
Author_Institution
LAAS du CNRS, 7, Av. du Colonel Roche, F-31077 Toulouse Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A compact model of the Power VDMOS Transistor compatible with the circuit simulator `` SPICE2´´ is described in this article. This model is applied to the simulation of switching circuit with resistive and inductive loads; comparisons with experimental results are presented.
Keywords
Capacitors; Circuit simulation; FETs; Load modeling; MOSFETs; SPICE; Solid modeling; Switching circuits; Topology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436983
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