Title :
Power MOS FET Models for ``Switching´´ Circuits
Author :
Rossel, P. ; Maimouni, R. ; Belabadia, M. ; Tranduc, H. ; Cordonnier, C.E. ; Bairanzade, M.
Author_Institution :
LAAS du CNRS, 7, Av. du Colonel Roche, F-31077 Toulouse Cedex, France
Abstract :
A compact model of the Power VDMOS Transistor compatible with the circuit simulator `` SPICE2´´ is described in this article. This model is applied to the simulation of switching circuit with resistive and inductive loads; comparisons with experimental results are presented.
Keywords :
Capacitors; Circuit simulation; FETs; Load modeling; MOSFETs; SPICE; Solid modeling; Switching circuits; Topology; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
