DocumentCode
514160
Title
Physical Behaviour Modelling of VDMOS Devices
Author
Paredes, J. ; Fernandez, J. ; Berta, F. ; Hidalgo, S. ; Rebollo, J. ; Millan, J.
Author_Institution
Centro Nacional de Microelectronica, CSIC-UAB, SP-08193 Bellaterra, Barcelona, Spain
fYear
1988
fDate
13-16 Sept. 1988
Abstract
An analytical model is proposed in order to explain the physical behaviour of VDMOS devices at any DC current level. The quasi-saturation effect is included considering the carrier saturation velocity at high electric fields. Interdigitated VDMOS devices have been fabricated and 2D simulations have been carried out to check the model.
Keywords
Analytical models; Doping; Driver circuits; Epitaxial growth; Equations; MOSFETs; Paints; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436984
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