Title :
Physical Behaviour Modelling of VDMOS Devices
Author :
Paredes, J. ; Fernandez, J. ; Berta, F. ; Hidalgo, S. ; Rebollo, J. ; Millan, J.
Author_Institution :
Centro Nacional de Microelectronica, CSIC-UAB, SP-08193 Bellaterra, Barcelona, Spain
Abstract :
An analytical model is proposed in order to explain the physical behaviour of VDMOS devices at any DC current level. The quasi-saturation effect is included considering the carrier saturation velocity at high electric fields. Interdigitated VDMOS devices have been fabricated and 2D simulations have been carried out to check the model.
Keywords :
Analytical models; Doping; Driver circuits; Epitaxial growth; Equations; MOSFETs; Paints; Surface resistance;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
