• DocumentCode
    514164
  • Title

    The Hot-Electron Problem in Submicron MOSFET

  • Author

    Hansch, W. ; Orlowski, M. ; Weber, W.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 M?nchen, F.R.G.
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    A review of the hot electron problem in MOSFET is given. This includes: Key experimental features, the problem of modelling hot carrier transport in Si and SiO2 after injection into the oxide, and an evaluation of technological measures to obtain hot carrier resistant structures.
  • Keywords
    Analytical models; Charge carrier processes; Circuit stability; Degradation; Electron traps; Hot carriers; MOSFET circuits; Microelectronics; Poisson equations; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514164