• DocumentCode
    514173
  • Title

    Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application

  • Author

    Renaud, M. ; Boher, P. ; Barrier, J. ; Schneider, J. ; Chane, J.P.

  • Author_Institution
    Laboratoires d´´Electronique et de Physique Appliquée, 3, Avenue Descartes - 94451 LIMEIL BREVANNES CEDEX (France)
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    129
  • Lastpage
    133
  • Abstract
    Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si3N4 interfaces. Interface states density in the low 1011 cm¿2 eV¿1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology.
  • Keywords
    FETs; Indium gallium arsenide; Insulation; MISFETs; Optical surface waves; Passivation; Plasma applications; Plasma devices; Surface treatment; Vacuum systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5437017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514173