DocumentCode :
514177
Title :
A Novel Method for Dimensional Loss Characterization
Author :
Caprara, P. ; Bergonzoni, C ; Cavioni, T.
Author_Institution :
SGS-Thomson Microelectronics, Via C. Olivetti 2, Agrate Brianza (MI), Italy
fYear :
1988
fDate :
13-16 Sept. 1988
Abstract :
The present tendency toward devices scaling in VLSI technology makes more and more difficult the electrical characterization of channel dimensions, The narrow channel effects have had a great consideration for what concern device modeling, but a minor attention about dimensional loss problems. The aim of thi work is to propos an effective width characterization method based on transconductance and not affected by the typical problems related to narrowv channel devices. Moreover, a compared analysis of this method to an other one previously proposed [1] is shown pointing out the phenomenological differences.
Keywords :
EPROM; Implants; Ion implantation; Microelectronics; Performance analysis; Process control; Temperature; Thickness control; Threshold voltage; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5437023
Link To Document :
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