Electron Beam Writing Erasure Switches

In this paper, it is shown for the first time that an electron beam is able to switch an oxide embedded floating gate MOS transistor from the on to the off state and inversely. These experiments are achieved in a classical Scanning Electron Microscope. We derive the influence of : i) the extracton voltage on the positive charging yield, ii) th initial floating gate voltage on its final positive voltage. These preliminary results open the way to future e-beam testing and reconfiguration method of integrated circuits.