DocumentCode
51436
Title
Physics of the Negative Resistance in the Avalanche 
Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness
Author
Spirito, Paolo ; Breglio, Giovanni ; Irace, Andrea ; Maresca, Luca ; Napoli, Ettore ; Riccio, Michele
Author_Institution
Dept. of Electr. & Inf. Technol. Eng., Univ. of Naples Federico II, Naples, Italy
Volume
61
Issue
5
fYear
2014
fDate
May-14
Firstpage
1457
Lastpage
1463
Abstract
In this paper, we investigate the avalanche behavior of field-stop insulated gate bipolar transistors (IGBTs) by means of analytical and theoretical considerations, supported by ad hoc numerical simulations. A physical explanation of the presence of negative differential resistance branches in the avalanche I-V curve of the IGBT is presented and design criteria are derived to reduce and eventually eliminate this effect.
Keywords
insulated gate bipolar transistors; negative resistance; IGBT; ad hoc numerical simulations; avalanche I-V curve; avalanche behavior; design criteria; field-stop insulated gate bipolar transistors; negative differential resistance branches; Current density; Doping; Insulated gate bipolar transistors; Integrated circuits; Mobile communication; Resistance; Transistors; Avalanche ruggedness; current filamentation; insulated gate bipolar transistor (IGBT) design; insulated gate bipolar transistor (IGBT) design.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2311169
Filename
6778060
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