Dynamic Characterization and Impulse Response Modeling of Amplitude and Phase Response of Silicon Nanowires

Author

Cleary, C.S. ; Hua Ji ; Dailey, James M. ; Webb, R.P. ; Manning, R.J. ; Galili, Michael ; Jeppesen, P. ; Minhao Pu ; Yvind, Kresten ; Oxenlowe, Leif K.

Author_Institution

Dept. of Phys., Univ. Coll. Cork, Cork, Ireland

Volume

5

Issue

2

fYear

2013

fDate

Apr-13

Firstpage

4500111

Lastpage

4500111

Abstract

Amplitude and phase dynamics of silicon nanowires were measured using time-resolved spectroscopy. Time shifts of the maximum phase change and minimum amplitude as a function of pump power due to saturation of the free-carrier density were observed. A phenomenological impulse response model used to fit the experimental data indicated that the free-carrier lifetime was between 7.5 ≤ τ_fc ≤ 16.2 ns, and the two-photon absorption coefficient and the Kerr coefficient were 3 × 10^-12 m.W^-1 and 4 ×10^-18 m^-18.W^-1, respectively, for silicon nanowires with lengths varying from 3.6 to 14.9 mm.

Keywords

absorption coefficients; carrier density; carrier lifetime; elemental semiconductors; nanowires; optical Kerr effect; silicon; time resolved spectra; two-photon processes; Kerr coefficient; Si; amplitude dynamics; amplitude response; dynamic characterization; free-carrier density saturation; free-carrier lifetime; phase dynamics; phase response; phenomenological impulse response model; pump power; silicon nanowires; time-resolved spectroscopy; two-photon absorption coefficient; Charge carrier lifetime; Nanowires; Optical waveguides; Phase measurement; Photonics; Probes; Silicon; Silicon nanowire; free-carrier absorption (FCA); pump–probe spectroscopy; two-photon absorption (TPA);

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2013.2246560

Filename

6459514