Modeling of Dynamic Operation of T-RAM Cells

Author

Resnati, Davide ; Monzio Compagnoni, Christian ; Mulaosmanovic, Halid ; Castellani, Niccolo ; Carnevale, Gianpietro ; Fantini, Paolo ; Ventrice, Domenico ; Lacaita, Andrea L. ; Spinelli, Alessandro S. ; Benvenuti, Augusto

Author_Institution

Dipt. di Elettron., Inf. e Bioingegneria, Politec. di Milano, Milan, Italy

Volume

62

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

1905

Lastpage

1911

Abstract

This paper presents a comprehensive simulation analysis of the dynamic operation of T-RAM cells. The analysis addresses the evolution of cell electrostatics and of carrier concentrations and flows in the device when the gate voltage undergoes a fast low-to-high switch, as required by both read and write operations. The results clarify, first of all, the basic physics making holes in the p-base the physical element allowing information storage in the device. From this starting point, the working principles exploited for DRAM operation of the memory cell are then explained.

Keywords

DRAM chips; carrier density; electrostatics; DRAM; T-RAM cells; carrier concentrations; cell electrostatics; memory cell; Anodes; Cathodes; Electric potential; Electrostatics; Junctions; Logic gates; Switches; Forward breakover; gated thyristors; nanoscale semiconductor devices; semiconductor device modeling; thyristor RAM (T-RAM); thyristor RAM (T-RAM).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2421556

Filename

7100898