DocumentCode :
51596
Title :
Avalanche Double Photodiode in 40-nm Standard CMOS Technology
Author :
Atef, M. ; Polzer, Andreas ; Zimmermann, Horst
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
Volume :
49
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
350
Lastpage :
356
Abstract :
This paper investigates a silicon (Si) avalanche double photodiode (ADPD) fabricated in 40-nm standard CMOS technology. Two different types of double photodiodes (DPDs) will be introduced. The first one is a P-well/deep-N-well/P-substrate(PW/DNW/P-substrate) DPD, and the second one is a P+/N-well/P-substrate (P+/NW/P-substrate) DPD. The basic structure of the proposed ADPD is formed by P+/NW and NW/P-substrate junctions in which the avalanche effect occurs at the P+/NW junction. The P+/NW/P-substrate ADPD demonstrates responsivity of 0.84 A/W and a 3-dB electrical bandwidth of 0.7 GHz at 850 nm. For 660 nm, the ADPD shows a responsivity of 0.49 A/W with an electrical bandwidth of 1.8 GHz. For 520 nm, a responsivity of 2.04 A/W and an electrical bandwidth of 1.4 GHz are achieved.
Keywords :
CMOS integrated circuits; avalanche photodiodes; integrated optoelectronics; avalanche double photodiode; avalanche effect; bandwidth 0.7 GHz; bandwidth 1.4 GHz; bandwidth 1.8 GHz; size 40 nm; standard CMOS technology; wavelength 520 nm; wavelength 660 nm; wavelength 850 nm; Bandwidth; CMOS integrated circuits; Capacitance; Junctions; Photodiodes; Silicon; Substrates; Avalanche photodiodes; double photodiodes (DPD); nanometer CMOS process; silicon photodiodes;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2013.2246546
Filename :
6459520
Link To Document :
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