• DocumentCode
    516015
  • Title

    CMOS-integrated low-noise germanium waveguide avalanche photodetector operating at 40Gbps

  • Author

    Assefa, Solomon ; Xia, Fengnian ; Vlasov, Yurii A.

  • Author_Institution
    Thomas J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
  • fYear
    2010
  • fDate
    21-25 March 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Germanium waveguide avalanche photodiode with 10dB gain and excess noise factor with keff below 0.2 was demonstrated. Gain-bandwidth-product above 350GHz was achieved at voltages around 3V. The avalanche photodetector was monolithically integrated into front-end CMOS.
  • Keywords
    avalanche photodiodes; germanium; integrated optics; optical waveguides; photodetectors; CMOS-integrated low-noise germanium waveguide avalanche photodetector; Germanium waveguide avalanche photodiode; bit rate 40 Gbit/s; frequency 350 GHz; gain 10 dB; voltage 3 V; Bandwidth; CMOS process; Contacts; Germanium; Optical interconnections; Optical waveguides; Photodetectors; Plugs; Semiconductor device noise; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
  • Conference_Location
    San Diego, CA
  • Electronic_ISBN
    978-1-55752-884-1
  • Type

    conf

  • Filename
    5465729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516015