DocumentCode :
516015
Title :
CMOS-integrated low-noise germanium waveguide avalanche photodetector operating at 40Gbps
Author :
Assefa, Solomon ; Xia, Fengnian ; Vlasov, Yurii A.
Author_Institution :
Thomas J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
fYear :
2010
fDate :
21-25 March 2010
Firstpage :
1
Lastpage :
3
Abstract :
Germanium waveguide avalanche photodiode with 10dB gain and excess noise factor with keff below 0.2 was demonstrated. Gain-bandwidth-product above 350GHz was achieved at voltages around 3V. The avalanche photodetector was monolithically integrated into front-end CMOS.
Keywords :
avalanche photodiodes; germanium; integrated optics; optical waveguides; photodetectors; CMOS-integrated low-noise germanium waveguide avalanche photodetector; Germanium waveguide avalanche photodiode; bit rate 40 Gbit/s; frequency 350 GHz; gain 10 dB; voltage 3 V; Bandwidth; CMOS process; Contacts; Germanium; Optical interconnections; Optical waveguides; Photodetectors; Plugs; Semiconductor device noise; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
Conference_Location :
San Diego, CA
Electronic_ISBN :
978-1-55752-884-1
Type :
conf
Filename :
5465729
Link To Document :
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