• DocumentCode
    516281
  • Title

    Monolithic System Integration of Optical Devices, Photodetectors and Analog Transimpedance CMOS Amplifiers

  • Author

    Brab, E. ; Hilleringmann, U. ; Schumacher, K.

  • Author_Institution
    Universitÿt Dortmund, AG Mikroelektronik, Emil-Figge-Str. 68, D - 44226 Dortmund. Tel.: (0231)755-2027 Fax.: (0231)755-4450
  • Volume
    1
  • fYear
    1993
  • fDate
    22-24 Sept. 1993
  • Firstpage
    242
  • Lastpage
    245
  • Abstract
    The monolithic system integration of optical components, photodetectors and analog transimpedance CMOS amplifiers is shown. On the basis of a submicron CMOS process an advanced SWAMI LOCOS technique is applied. Different optical devices like waveguides, beam splitters, interferometers and mirrors have been integrated. The optical system consists of a SiON layer deposited on 2¿m field oxide. The waveguides are made of structured SiO2 layers on top of the SiON layer. Leaky wave or butt coupled photodiodes and phototransistors are used as light detectors. The photocurrents are amplified by low noise CMOS transimpedance amplifiers with high sensitivity. They were designed for a large dynamic range of photocurrents, short recovery times, low noise and optimized reliability in fabrication.
  • Keywords
    CMOS process; Interferometers; Optical amplifiers; Optical beam splitting; Optical devices; Optical noise; Optical waveguides; Photoconductivity; Photodetectors; Semiconductor optical amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1993. ESSCIRC '93. Nineteenth European
  • Conference_Location
    Sevilla, Spain
  • Print_ISBN
    2-86335-134-X
  • Type

    conf

  • Filename
    5467885