DocumentCode
516281
Title
Monolithic System Integration of Optical Devices, Photodetectors and Analog Transimpedance CMOS Amplifiers
Author
Brab, E. ; Hilleringmann, U. ; Schumacher, K.
Author_Institution
Universitÿt Dortmund, AG Mikroelektronik, Emil-Figge-Str. 68, D - 44226 Dortmund. Tel.: (0231)755-2027 Fax.: (0231)755-4450
Volume
1
fYear
1993
fDate
22-24 Sept. 1993
Firstpage
242
Lastpage
245
Abstract
The monolithic system integration of optical components, photodetectors and analog transimpedance CMOS amplifiers is shown. On the basis of a submicron CMOS process an advanced SWAMI LOCOS technique is applied. Different optical devices like waveguides, beam splitters, interferometers and mirrors have been integrated. The optical system consists of a SiON layer deposited on 2¿m field oxide. The waveguides are made of structured SiO2 layers on top of the SiON layer. Leaky wave or butt coupled photodiodes and phototransistors are used as light detectors. The photocurrents are amplified by low noise CMOS transimpedance amplifiers with high sensitivity. They were designed for a large dynamic range of photocurrents, short recovery times, low noise and optimized reliability in fabrication.
Keywords
CMOS process; Interferometers; Optical amplifiers; Optical beam splitting; Optical devices; Optical noise; Optical waveguides; Photoconductivity; Photodetectors; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1993. ESSCIRC '93. Nineteenth European
Conference_Location
Sevilla, Spain
Print_ISBN
2-86335-134-X
Type
conf
Filename
5467885
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