DocumentCode
516445
Title
MOSLAM : A switch level simulator based on an efficient analysis of conducting paths
Author
Amadou, P. ; Durante, C. ; Guiraudou, P. ; Landrault, C. ; Tabusse, M.
Author_Institution
Laboratoire d´´Automatique et de Microélectronique, de Montpellier, Université des Sciences et Techniques, du Languedoc, Place E. Bataillon 34060 Montpellier CEDEX (FRANCE)
fYear
1985
fDate
16-18 Sept. 1985
Firstpage
286
Lastpage
290
Abstract
This paper aims to present a new switch level simulator for MOS VLSI design. The simplicity of its algorithms and its rapidity are felt to be attractive for designers. As an introduction, we will situate the switch level as a good alternative to the boolean gate level of description. In the second section we will briefly discuss two existing simulators, FLOGMOS and MOSSIM 2. Finally in third section, we will present the basic ideas which led to the elaboration of MOSLAM, the great lines of the used algorithms, and some of the advantages this simulator represents.
Keywords
Analytical models; Capacitance; Circuit simulation; Computational modeling; Logic circuits; Logic gates; Partitioning algorithms; Switches; Switching circuits; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1985. ESSCIRC '85. 11th European
Conference_Location
Toulouse, France
Type
conf
Filename
5468114
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