DocumentCode
516474
Title
Soft Errors in Static NMOS RAMs
Author
Carter, P.M. ; Wilkins, B.R.
Author_Institution
Department of Electronics and Information Engineering, Southampton University, Southampton, SO9 5NH
fYear
1986
fDate
16-18 Sept. 1986
Firstpage
13
Lastpage
15
Abstract
Soft error rates in static RAMs have been measured, and shown to be comparable to those of DRAMs under typical operating conditions. Ways of reducing the alpha-sensitivity have been assessed both by analysis of a simplified model of the SRAM cell, and by SPICE simulations.
Keywords
Alpha particles; Circuit simulation; Error analysis; MOS devices; Manufacturing; Particle measurements; Random access memory; SPICE; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1986. ESSCIRC '86. Twelfth European
Conference_Location
Delft, The Netherlands
Type
conf
Filename
5468244
Link To Document