Title :
An Integrated Magnetic Field Sensor based on Magnetotransistors
Author_Institution :
LGZ Landis & Gyr Zug Corp., Central Research and Development, CH-6301 Zug, Switzerland
Abstract :
A CMOS-circuit, which works as a four quadrant magnetic induction-voltage multiplier, is described. The sensitive elements are CMOS-compatible bipolar magnetotransistors. The logarithmized signal from the magnetotransistors is multiplied by the input-voltage in a transconductance multiplier based on lateral bipolar transistors. The circuit shows good linearity for fields lower than 0.1 Tesla and works at a supply current of only 1 mA.
Keywords :
Bipolar transistors; CMOS technology; Current supplies; Integrated circuit technology; Linearity; Magnetic fields; Magnetic sensors; Research and development; Transconductance; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1986. ESSCIRC '86. Twelfth European
Conference_Location :
Delft, The Netherlands